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2SD155 - NPN Transistor

Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency po

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Datasheet Details

Part number 2SD155
Manufacturer INCHANGE
File Size 177.59 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD155 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current 1.
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