Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
Wide Area of Safe Operation
Complement to Type 2SB1086
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier applications.
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
Total Power Dissipation
@ TC=25℃ PC
Total Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
3
A
10 W
1.2
150
Tstg
Storage Temperature Range
-55~150 ℃
2SD1563
isc website：www.iscsemi.
2SD1563 Datasheet
