High Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V (Min)
High Switching Speed
Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 0.5A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high voltage swi
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
1.
2SD1571 Datasheet
