High Breakdown Voltage-
: VCBO= 1300V (Min)
High Switching Speed
High Reliability
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for horizontal output applications
ABSOLUTE MAXIMUM R
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1300
V
VCES
Collector-Emitter Voltage
1300
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Peak
17
A
IBP
Base Current-Peak
3.5
A
IBP
Reverse Base Current-Peak
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2.
2SD1577 Datasheet
