Collector Current -IC= 30A
High DC Current Gain-
: hFE= 1000(Min)@ IC= 15A
Low Collector Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power amplifier and low
speed high current
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 30A ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 15A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1597
isc website：www.iscsemi.
2SD1597 Datasheet
