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2SD1666 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 2 W 25 150 ℃ Tstg Storage Temperature -40~150 ℃ 2SD1666 isc website：www.iscsemi.