2SD1669 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max.) Wide Area of Safe Operation Complement to Type 2SB1136 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

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Datasheet Details

Part number	2SD1669
Manufacturer	Inchange Semiconductor
File Size	210.34 KB
Description	NPN Transistor
Datasheet	2SD1669 Datasheet

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isc Silicon NPN Power Transistor 2SD1669 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max.) ·Wide Area of Safe Operation ·Complement to Type 2SB1136 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high speed inverters,converters and other general high current switching applications.