Collector
Emitter Sustaining Voltage
: VCEO(SUS) = 100V(min.)
DC Current Gain
: hFE = 2000(Min.) @ IC= 1.5 A
Complement to Type 2SB1149
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for gene
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = 100V(min.) ·DC Current Gain—
: hFE = 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
Ta=25℃ PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
5
A
1.3 W
15
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1692
isc website：www.iscsemi.
2SD1692 Datasheet
