Datasheet4U Logo Datasheet4U.com

2SD1712 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier appl

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1712 SILICON POWER TRANSISTOR SavantIC
2SD1710 NPN Silicon Power Transistors MCC
2SD1710 SILICON POWER TRANSISTOR SavantIC
2SD1710 NPN Triple Diffused Planar Silicon Transistor Sanyo
2SD1710A Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1710 NPN Transistor
2SD1715 NPN Transistor
2SD1717 NPN Transistor
2SD1718 NPN Transistor
2SD1705 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1157 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8 A 60 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1712 isc website：www.iscsemi.