Datasheet Details
| Part number | 2SD1764 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.60 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1764 Datasheet
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| Part number | 2SD1764 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.60 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1764 Datasheet
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·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Bullt-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forr Motor，Relay and Solenoid driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1764 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 MIN TYP.
MAX UNIT 50 70 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1764 | (2SDxxxx) Medium Power Transistor | ROHM |
| Part Number | Description |
|---|---|
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| 2SD1710 | NPN Transistor |
| 2SD1712 | NPN Transistor |
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| 2SD1717 | NPN Transistor |