Part Number	2SD1764 Datasheet
Manufacturer	Inchange Semiconductor
Overview	·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Bullt-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and. erwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 MIN TYP. MAX UNIT 50 70 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 50 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA 1.5 V VBE(sat) Base-Emi.