2SD1764 Overview
hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1764 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; MAX UNIT 50 70 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;.
