FEATURES
1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. !External dimensions (Units : mm) 2SD1767 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD1767 2SD1859 Tj Tstg Symbol VCBO VCEO VEBO IC Limits 80 80 5 0.7 1 0.5 PC 2 1 150 −55~+150 °C °C W ∗2 ∗3 0.5 (3) V A(DC) A(Pulse) ∗1 0.4 V V ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD1859 6.8 2.5 ∗1 Pw=10ms, duty=1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 0.5 (1) (2) (3) 2.54 2.54 Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1767 MPT3 PQR 2SD1859 ATV QR − TV2 2500 ∗Denotes h DC∗ T100 1000 1.05 14.5 !Packaging specifications and hFE 0.65Max. 1.0 0.9 4.4 1.5 0.45 Unit 1.5 0.4 Taping s...
ROHM Semiconductor