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2SD1767 - Medium power transistor

Key Features

  • 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. !External dimensions (Units : mm) 2SD1767 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD1767 2SD1859 Tj Tstg Symbol VCBO VCEO VEBO IC Limits 80 80 5 0.7 1 0.5 PC 2 1 150.
  • 55~+150 °C °C W ∗2 ∗3.

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Datasheet Details

Part number 2SD1767
Manufacturer ROHM
File Size 53.57 KB
Description Medium power transistor
Datasheet download datasheet 2SD1767 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. !External dimensions (Units : mm) 2SD1767 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD1767 2SD1859 Tj Tstg Symbol VCBO VCEO VEBO IC Limits 80 80 5 0.7 1 0.5 PC 2 1 150 −55~+150 °C °C W ∗2 ∗3 0.5 (3) V A(DC) A(Pulse) ∗1 0.4 V V ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD1859 6.8 2.5 ∗1 Pw=10ms, duty=1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board.