2SD1768S
Features
1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good h FE linearity 4) Low VCE (sat) 5) plements the 2SB1260 /
2SB1241 / 2SB1181
- Structure Epitaxial planer type NPN silicon transistor
- Dimensions (Unit : mm)
2SD1898
4.5+- 00..21 1.6±0.1
1.5- +00..12
0.5±0.1
4.0±0.3 2.5+- 00..21
ROHM : MPT3 EIAJ : SC-62
2SD1733
6.5±0.2 5.1+- 00..21
C0.5
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
0.4- +00..015
Abbreviated symbol : DF
2.3+- 00..21 0.5±0.1
3±0.2
4±0.2
(1) Base (2) Collector (3) Emitter
2±0.2
3Min.
5.5+- 00..31 1.5±0.3 0.9
(15Min.)
1.5 2.5
9.5±0.5
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
0.55±0.1 1.0±0.2
ROHM : CPT3 EIAJ : SC-63
2SD1863
6.8±0.2
(1) Base (2) Collector (3)...
