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2SD1762 - Power Transistor

Key Features

  • Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）.
  • Complements the 2SB1185. Pb Lead-free Production specification 2SD1762 TO-220AB.

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Power Transistor(50V,3A ) FEATURES  Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）  Complements the 2SB1185. Pb Lead-free Production specification 2SD1762 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Dissipation Ta=25℃ TC=25℃ Junction and Storage Temperature 50 V 5V 3 A 4.5 1 W 25 -55 to +150 ℃ X036 Rev.A www.gmesemi.com 1 Production specification Power Transistor(50V,3A ) 2SD1762 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.