2SD1760 - Power Transistor

ROHM

Key Features

1) Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243.
Structure Epitaxial planar type NPN silicon transistor.
Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2.
0.1 C0.5 2.3 +0.2.
0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 1.0 0.9 1.5 2.5 9.5±0.5 +0.3.
0.1 0.9 5.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 0.55±0.1 1.0±0.2 (1) Base (2) Collector (3) Emitter 0.

2SD1760 power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD1760
Manufacturer	ROHM
File Size	167.18 KB
Description	Power Transistor
Datasheet	2SD1760 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SD1762	Power Transistor
2SD1763	Power Transistor
2SD1764	(2SDxxxx) Medium Power Transistor
2SD1766	Medium Power Transistor
2SD1767	Medium power transistor

Full PDF Text Transcription (Reference)

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Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 1.0 0.9 1.5 2.5 9.5±0.5 +0.3 −0.1 0.9 5.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 0.55±0.1 1.0±0.2 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.