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2SD1766 - Medium Power Transistor

Datasheet Summary

Features

  • 1) Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240.
  • Structure Epitaxial planar type NPN silicon transistor 0.5±0.1.
  • Dimensions (Unit : mm) 2SD1766 4.5+.
  • 00..21 1.6±0.1 1.5 +0.2.
  • 0.1 2SD1758 6.5±0.2 5.1+.
  • 00..21 C0.5 2.3+.
  • 00..21 0.5±0.1 5.5+.
  • 00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 4.0±0.3 2.5+.
  • 00..21 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4 +0.

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Datasheet Details

Part number 2SD1766
Manufacturer ROHM
File Size 159.26 KB
Description Medium Power Transistor
Datasheet download datasheet 2SD1766 Datasheet
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Full PDF Text Transcription

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Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 Structure Epitaxial planar type NPN silicon transistor 0.5±0.1 Dimensions (Unit : mm) 2SD1766 4.5+−00..21 1.6±0.1 1.5 +0.2 −0.1 2SD1758 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 4.0±0.3 2.5+−00..21 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4 +0.1 −0.05 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD1862 6.8±0.2 2.5±0.2 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 4.4±0.2 1.0 0.9 0.65Max. 14.
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