2SD1760 - Power Transistor

Galaxy Microelectronics

Key Features

Low VCE(sat). VCE(sat)=0.5V(Typ. ) (IC/IB=2A/0.2A).
Complements the 2SB1184.

2SD1760 power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SD1760
Manufacturer	Galaxy Microelectronics
File Size	297.83 KB
Description	Power Transistor
Datasheet	2SD1760 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1184. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Production specification 2SD1760 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 3A ICP Collector Current(Pulse) 4.5 A IB Base Current 1A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W016 Rev.A www.gmesemi.