| Part number | 2SD1760 |
|---|---|
| Datasheet | 2SD1760-InchangeSemiconductor.pdf |
| File Size | 227.86 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD1760 | NPN Silicon Epitaxial Planar Transistor | GME |
 |
2SD1760 | Power Transistor | Rohm |
 |
2SD1760 | NPN Transistors | MLSM |
 |
2SD1760 | NPN Epitaxial Planar Silicon Transistor | SeCoS |
 |
2SD1760 | NPN Transistors | Kexin |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1761 | Silicon NPN Power Transistors |
| 2SD1763A | Silicon NPN Power Transistor |
| 2SD1706 | Silicon NPN Power Transistor |
| 2SD1709 | Silicon NPN Power Transistor |
| 2SD1711 | Silicon NPN Power Transistors |
| 2SD1713 | Power Transistor |
| 2SD1714 | Power Transistor |
| 2SD1716 | Power Transistor |
| 2SD1720 | Power Transistor |
| 2SD1727 | Power Transistor |
