2SD1760 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A Complements the 2SB1184 Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATIN

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2SD1760 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1760
Manufacturer	Inchange Semiconductor
File Size	227.86 KB
Description	Silicon NPN Power Transistor
Datasheet	2SD1760 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complements the 2SB1184 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 4.5 A PC Collector Power Dissipation 15 W TJ Junction Temperature Tstg Storage Temperature Range 150 ℃ -55~150 ℃ isc website：www.iscsemi.