Datasheet4U Logo Datasheet4U.com

2SD1760 - NPN Transistors

Datasheet Summary

Features

  • s.
  • Low VCE (sat).
  • Complementary to 2SB1184 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0.151 .5 0 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.155 .5 5 -0.15 3.80 Unit: mm +2.65 0.25 -0.1 +0.50 0.15 -0.15 +1.50 0.28 -0.1 + 0.29 .7 0 -0.2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temp.

📥 Download Datasheet

Datasheet preview – 2SD1760

Datasheet Details

Part number 2SD1760
Manufacturer Kexin
File Size 1.05 MB
Description NPN Transistors
Datasheet download datasheet 2SD1760 Datasheet
Additional preview pages of the 2SD1760 datasheet.

📁 Similar Datasheet

  • 2SD1760 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1760 - Power Transistor (GME)
  • 2SD1760 - Power Transistor (Rohm)
  • 2SD1760 - NPN Epitaxial Planar Silicon Transistor (SeCoS)
  • 2SD1761 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1761 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SD1762 - Power Transistor (Rohm)
  • 2SD1762 - Power Transistor (GME)
  • 2SD1762 - NPN Transistor (JCST)
  • 2SD1762 - NPN Transistor (INCHANGE)
Other Datasheets by Kexin
  • 2SD1767 - Medium Power Transistor
  • 2SD1781K - Medium Power Transistor
  • 2SD1782K - Power Transistor
  • 2SD1000 - NPN Silicon Epitaxial Transistor
  • 2SD1001 - NPN Silicon Epitaxial Transistor
  • 2SD1005 - NPN Silicon Epitaxial Transistor
  • 2SD1006 - NPN Silicon Epitaxial Transistor
  • 2SD1007 - NPN Silicon Epitaxial Transistor

Full PDF Text Transcription

Click to expand full text
SMD Type NPN Transistors 2SD1760 Transistors ■ Features ● Low VCE (sat) ● Complementary to 2SB1184 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0.151 .5 0 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.155 .5 5 -0.15 3.80 Unit: mm +2.65 0.25 -0.1 +0.50 0.15 -0.15 +1.50 0.28 -0.1 + 0.29 .7 0 -0.2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Tc=25°C Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 Rating 60 50 5 3 4.
Published: |