SeCoS Halbleitertechnologie GmbH 2SD1760
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SD1760 |
|---|---|
| Datasheet | 2SD1760 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A)● Complements the 2SB1184 D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD1760-P 2SD1760-Q Range 82~180 120~270 2SD1760-R 180~390 PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13’ inch Collector Base
● Emitter A BC D GE K HF MJ N O P Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 3 1.5 150 -55 ~ 150 Unit V V V A W ℃ ℃ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown vo...
