Download 2SD1763A Datasheet PDF
Inchange Semiconductor
2SD1763A
DESCRIPTION - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) - Good Linearity of h FE - plement to Type 2SB1186A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Power amplifier applications. - Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ Junction Temperature 2 W ℃ Tstg Storage Temperature...