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2SD1763 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) Good Linearity of hFE Complement to Type 2SB1186 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier applica

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.