Datasheet Details
| Part number | 2SD1762 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.92 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1762-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1762 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.92 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1762-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 2A ·plement to Type 2SB1185 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1762 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1762 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1762 | Power Transistor | Rohm |
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2SD1762 | Power Transistor | GME |
 |
2SD1762 | NPN Transistor | JCST |
 |
2SD1762 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SD1765 | NPN Transistor |
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| 2SD1707 | NPN Transistor |
| 2SD1710 | NPN Transistor |
| 2SD1712 | NPN Transistor |
| 2SD1715 | NPN Transistor |
| 2SD1717 | NPN Transistor |