Datasheet Details
| Part number | 2SD1769 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.02 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1769-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1769.
| Part number | 2SD1769 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.02 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1769-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for solenoid driver, relay and motor, series regulator, and general purpose applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 1 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1769 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 3mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A ,IB= 3mA ICBO Collector Cutoff Current VCB= 120V, IE= 0 IEBO Emitter Cutoff Current VEB= 6V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1769 | Silicon NPN Transistor | Sanken electric |
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|---|---|
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