2SD1767 - Medium power transistor

Galaxy Microelectronics

Key Features

High breakdown voltage and high current.
Complementary pair with 2SB1189. Pb Lead-free Production specification 2SD1767.

2SD1767 medium power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SD1767
Manufacturer	Galaxy Microelectronics
File Size	216.86 KB
Description	Medium power transistor
Datasheet	2SD1767 Datasheet

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Medium power transistor(80V,0.7A) FEATURES  High breakdown voltage and high current.  Complementary pair with 2SB1189. Pb Lead-free Production specification 2SD1767 ORDERING INFORMATION Type No. Marking 2SD1767 DCP/DCQ/DCR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 80 Units V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 0.7 A PC Collector Dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E058 Rev.A www.gmesemi.com 1 Production specification Medium power transistor(80V,0.