• Part: 2SD1767
  • Description: Medium power transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 216.86 KB
Download 2SD1767 Datasheet PDF
Galaxy Microelectronics
2SD1767
FEATURES - High breakdown voltage and high current. - plementary pair with 2SB1189. Pb Lead-free Production specification ORDERING INFORMATION Type No. Marking DCP/DCQ/DCR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage Units V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 0.7 A PC Collector Dissipation 500 m W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E058 Rev.A .gmesemi. Production specification Medium power transistor(80V,0.7A) ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...