Galaxy Century Microelectronics 2SD1767
Medium power transistor
| Part No. | 2SD1767 |
|---|---|
| Datasheet | 2SD1767 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Medium power transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage and high current.● Complementary pair with 2SB1189. Pb Lead-free Production specification 2SD1767 ORDERING INFORMATION Type No. Marking 2SD1767 DCP/DCQ/DCR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 80 Units V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 0.7 A PC Collector Dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E058 Rev.A 1 Production specification Medium power transistor(80V,0.7A) 2SD1767
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0
