Datasheet Details
| Part number | 2SD1825 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.03 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1825 Datasheet
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| Part number | 2SD1825 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.03 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1825 Datasheet
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·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Large Current Capability and Wide ASO.
·Complement to Type 2SB1223 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
isc Silicon NPN Darlington Power Transistor 2SD1825.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1825 | NPN Transistor | Sanyo Semicon Device |
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2SD1825 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SD1804-T | NPN Transistor |
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| 2SD1816L | Silicon NPN Power Transistor |