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2SD1826 - NPN Transistor

General Description

High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 3.5A)

Large Current Capability and Wide ASO.

Complement to Type 2SB1224 APPLICATIONS

hammer drivers, relay drivers,and constant-voltage regulators.

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isc Silicon NPN Darlington Power Transistor 2SD1826 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 3.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1224 APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.