High DC Current Gain-
: hFE= 5000(Min)@IC= 6A
Low-Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max.)@IC= 6A
Complement to Type 2SB1254
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier applications
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
2SD1894
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= 6A ·Low-Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max.)@IC= 6A ·Complement to Type 2SB1254 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
12
A
70 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD1894 Datasheet
