2SD1897 Overview
·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Collector Power Dissipation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1897 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
