2SD1897 - NPN Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A High Collector Power Dissipation Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifier applications.

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2SD1897 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1897
Manufacturer	Inchange Semiconductor
File Size	207.01 KB
Description	NPN Transistor
Datasheet	2SD1897 Datasheet

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isc Silicon NPN Power Transistor 2SD1897 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Collector Power Dissipation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.