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2SD1899-K - NPN Transistor

General Description

Low Collector Saturation Voltage High Power Dissipation- : PC= 10W(Max)@TC=25℃ Complement to Type 2SB1261-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SB1261-K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1899-K isc website：www.iscsemi.