2SD1940 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF 25~30W output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1940 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
