High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for CTV/character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S
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isc Silicon NPN Power Transistor
2SD1941
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for CTV/character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
650
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
6
A
IC(peak) Collector Current- Peak
7
A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD1941 Datasheet
