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2SD1985 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max,)@ IC= 3A Complement to Type 2SB1393 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max,)@ IC= 3A ·Complement to Type 2SB1393 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.