| Part number | 2SD1985 |
|---|---|
| Datasheet | 2SD1985-INCHANGE.pdf |
| File Size | 212.30 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max,)@ IC= 3A ·plement to Type 2SB1393 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1985 | Silicon NPN Transistor | Panasonic Semiconductor |
 |
2SD1985 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1985A | Silicon NPN Transistor | Panasonic Semiconductor |
