Datasheet Details
| Part number | 2SD2016 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 206.49 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2016-INCHANGE.pdf
|
| Part number | 2SD2016 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 206.49 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2016-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter, relay and general purpose applications.
📁 2SD2016 Similar Datasheet