Datasheet Details
| Part number | 2SD2017 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.44 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2017 Datasheet
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General Description
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min)
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 2A
High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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