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2SD2047 - NPN Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃

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isc Silicon NPN Power Transistor 2SD2047 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse 10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Res