Datasheet4U Logo Datasheet4U.com

2SD2058 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) Collector Power Dissipation : PC= 25 W(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2058 Silicon NPN Power Transistors Savant
2SD2050 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SD2051 Silicon NPN Transistor Panasonic Semiconductor
2SD2052 Silicon NPN Transistor Panasonic Semiconductor
2SD2052 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD2051 NPN Transistor
2SD2052 NPN Transistor
2SD2053 NPN Transistor
2SD2055 NPN Transistor
2SD2057 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Collector Power Dissipation : PC= 25 W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2058 isc website：www.iscsemi.