2SD2060 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector Power Dissipation- : PC= 25W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= 1.7V(Max)@ (IC= 3A, IB= 0.3A) Complement to Type 2SB1368 Minimum Lot-to-Lot variations for robust device performance and re

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2SD2060 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD2060
Manufacturer	Inchange Semiconductor
File Size	195.40 KB
Description	NPN Transistor
Datasheet	2SD2060 Datasheet

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isc Silicon NPN Power Transistor 2SD2060 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.7V(Max)@ (IC= 3A, IB= 0.3A) ·Complement to Type 2SB1368 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.