2SD2079 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 6mA) Complement to Type 2SB1381 Minimum Lot-to-Lot variations for robust device performa

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Datasheet Details

Part number	2SD2079
Manufacturer	Inchange Semiconductor
File Size	192.00 KB
Description	NPN Transistor
Datasheet	2SD2079 Datasheet

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 6mA) ·Complement to Type 2SB1381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications.