2SD2079 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage-.
| Part number | 2SD2079 |
|---|---|
| Datasheet | 2SD2079-INCHANGE.pdf |
| File Size | 192.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SD2079 | Silicon NPN Transistor | Toshiba Semiconductor | |
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2SD2079 | SILICON POWER TRANSISTOR | SavantIC |