Datasheet Details
| Part number | 2SD2101 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 193.98 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2101-INCHANGE.pdf
|
| Part number | 2SD2101 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 193.98 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2101-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications.
📁 2SD2101 Similar Datasheet