2SD2108 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain.
| Part number | 2SD2108 |
|---|---|
| Datasheet | 2SD2108-INCHANGE.pdf |
| File Size | 194.53 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SD2108 | Silicon NPN Transistor | Hitachi Semiconductor |