2SD2129 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain.
| Part number | 2SD2129 |
|---|---|
| Datasheet | 2SD2129-INCHANGE.pdf |
| File Size | 191.33 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SD2129 | Silicon NPN Transistor | Toshiba Semiconductor | |
![]() |
2SD2129 | SILICON POWER TRANSISTOR | SavantIC |