Silicon NPN triple diffusion planar type
Complementary to 2SB1417A
Low Collector to Emitter Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
Allowing supply with the radial taping
APPLICATIONS
Designed for power ampl
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isc Silicon NPN Power Transistor
DESCRIPTION ·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417A ·Low Collector to Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Allowing supply with the radial taping
APPLICATIONS ·Designed for power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
5
A
Total Power Dissipation @TC=25℃
15
PT
W
Total Power Dissipation @Ta=25℃
2
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SD2137A
isc website： www.iscsemi.
2SD2137A Datasheet
