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2SD2137A Datasheet Preview

2SD2137A Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Silicon NPN triple diffusion planar type
·Complementary to 2SB1417A
·Low Collector to Emitter Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Allowing supply with the radial taping
APPLICATIONS
·Designed for power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
5
A
Total Power Dissipation @TC=25
15
PT
W
Total Power Dissipation @Ta=25
2
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~150
2SD2137A
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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2SD2137A Datasheet Preview

2SD2137A Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SD2137A
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA, Ib=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A
VBE(ON) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
ICEO
Collector Cutoff Current
VCE= 60V; Ib=0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE=4V
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A
IB1= -IB2= 0.1A,VCC50V
MIN TYP. MAX UNIT
80
V
1.2
V
1.8
V
100 μA
100 μA
100 μA
70
250
10
30
MHz
0.3
μs
2.5
μs
0.2
μs
hFE-1 Classifications
Q
P
70-150 120-250
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SD2137A
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2SD2137A Datasheet PDF





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