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2SD2155 - NPN Transistor

General Description

High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Complement to Type 2SB1429 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications R

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isc Silicon NPN Power Transistor 2SD2155 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SB1429 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.