Datasheet4U Logo Datasheet4U.com

2SD2276 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) Complement to Type 2SB1503 Minimum Lot-to-Lot variations for robust device perfor

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2276 Silicon NPN Transistor Panasonic Semiconductor
2SD227 Transistors USHA
2SD2271 Silicon NPN Transistor Toshiba Semiconductor
2SD2273 Silicon NPN Transistor Panasonic Semiconductor
2SD2275 Silicon NPN Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD2271 Silicon NPN Darlington Power Transistor
2SD2275 NPN Transistor
2SD2222 NPN Transistor
2SD2232 NPN Transistor
2SD2241 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) ·Complement to Type 2SB1503 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A 3.