Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.0A
Complement to Type 2SB434
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio po
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isc Silicon NPN Power Transistor
2SD234
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.0A ·Complement to Type 2SB434 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3.0
A
1.5 W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD234 Datasheet
