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2SD2384 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) High DC Current Gain- : hFE= 5000(Min)@IC= 6A Complement to Type 2SB1555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABS

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 6A ·Complement to Type 2SB1555 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2384 isc website：www.iscsemi.