Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
High DC Current Gain-
: hFE= 5000(Min)@IC= 7A
Complement to Type 2SB1556
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier applications
ABSO
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High DC Current Gain-
: hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.1
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2385
isc website：www.iscsemi.
2SD2385 Datasheet
