2SD2389
2SD2389 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
- High DC Current Gain-
: h FE= 5000( Min.) @(IC= 6A, VCE= 4V)
- Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6m A)
- plement to Type 2SB1559
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio, series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature
-55~150 ℃
2SD2389 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power...
